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ZXTDA1M832
MPPSTM Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION
SUMMARY NPN Transistor PNP Transistor DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count
C2
3mm x 2mm Dual Die MLP
VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A
FEATURES
* Low Equivalent On Resistance * Extremely Low Saturation Voltage (100mV max @1A--NPN) * HFE specified up to 12A * IC = 4.5A Continuous Collector Current * 3mm x 2mm MLP
B2
E2
APPLICATIONS
* DC - DC Converters * Charging circuits * Power switches * Motor control * LED Backlighting circuits
PINOUT
ORDERING INFORMATION
DEVICE ZXTDA1M832TA ZXTDA1M832TC REEL 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000
3mm x 2mm Dual MLP underside view
DEVICE MARKING
DA1 ISSUE 1 - JUNE 2002 1
ZXTDA1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a)(f) Continuous Collector Current (b)(f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temperature Range Junction Temperature SYMBOL V CBO V CEO V EBO I CM IC IC IB PD PD PD PD PD PD T stg Tj NPN 40 15 7.5 15 4.5 5 1000 1.5 12 2.45 19.6 1 8 1.13 8 1.7 13.6 3 24 -55 to +150 150 PNP -20 -12 -7.5 -12 -4 -4.4 UNIT V V V A A A mA W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g)
Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
SYMBOL R JA R JA R JA R JA R JA R JA
VALUE 83.3 51 125 111 73.5 41.7
UNIT C/W C/W C/W C/W C/W C/W
ISSUE 1 - JUNE 2002 2
ZXTDA1M832
TYPICAL CHARACTERISTICS
IC Collector Current (A)
IC Collector Current (A)
10
VCE(SAT) Limited
10
VCE(SAT) Limited
1
DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25C 1ms 100us
1
DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25C 1ms 100us
0.1
0.1
0.01 0.1
0.01 0.1
1
10
1
10
VCE Collector-Emitter Voltage (V)
VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area
3.5
PNP Safe Operating Area
Max Power Dissipation (W)
2oz Cu Note (e)(g) Tamb=25C
Thermal Resistance (C/W)
80 60
Note (a)(f)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
1oz Cu Note (d)(f)
2oz Cu Note (a)(f) 1oz Cu Note (d)(g)
D=0.5
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100 1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
3.5 3.0
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
Thermal Resistance (C/W)
PD Dissipation (W)
2.5 2.0 1.5 1.0 0.5 0.0 0.1
Tamb=25C Tj max=150C Continuous 2oz copper Note (f)
2oz copper Note (g)
1oz copper Note (f) 1oz copper Note (g)
1oz copper Note (f)
1oz copper Note (g)
2oz copper Note (f) 2oz copper Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002 3
ZXTDA1M832
NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 8 70 165 240 0.94 0.88 200 300 200 150 80 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns MIN. 40 15 7.5 TYP. 70 18 8.2 25 25 25 14 100 200 280 1.00 0.95 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =32V V EB =6V V CE =12V I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =3A, I B =50mA I C =4.5A, I B =50mA I C =4.5A, I B =50mA* I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =12A, V CE =2V* I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz V CC =-6V, I C =-1A I B1 =I B2 =-10mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002 4
ZXTDA1M832
NPN CHARACTERISTICS
1
Tamb=25C
0.25
IC/IB=50
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
0.15 0.10 0.05
100C 25C -55C
10m
IC/IB=50 IC/IB=10
1m 1m
IC Collector Current (A)
10m
100m
1
10
0.00 1m
VCE(SAT) v IC
IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
630 1.2
VCE=2V 100C
540 450
1.0 0.8
IC/IB=50
Normalised Gain
1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10
-55C 25C
Typical Gain (hFE)
360 270 180 90 0
VBE(SAT) (V)
-55C
0.6 0.4 1m
25C 100C
IC Collector Current (A)
hFE v IC
IC Collector Current (A)
10m
100m
1
10
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002 5
ZXTDA1M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -10 -100 -100 -195 -240 -0.97 -0.87 300 300 180 60 45 100 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns MIN. -20 -12 -7.5 TYP. -35 -25 -8.5 -25 -25 -25 -17 -140 -150 -300 -300 -1.050 -0.950 MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-16V V EB =-6V V CE =-10V I C =-0.1A, I B =-10mA* I C =-1.0A, I B =-10mA* I C =-1.5A, I B =-50mA* I C =-3A, I B =-50mA* I C =-4A, I B =-150mA* I C =-4A, I B =-150mA* I C =-4A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-100mA, V CE =-2V* I C =-2.5A, V CE =-2V* I C =-8A, V CE =-2V* I C =-10A, V CE =-2V* I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz V CC =-10V, I C =-1A I B1 =I B2 =-50mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002 6
ZXTDA1M832
PNP CHARACTERISTICS
0.25
Tamb=25C IC/IB=50
100m
0.20
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=100
0.15 0.10 0.05
100C 25C -55C
10m
IC/IB=50 IC/IB=10
1m 1m
IC Collector Current (A)
10m
100m
1
10
0.00 1m
VCE(SAT) v IC
IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
1.4
Normalised Gain
VBE(SAT) (V)
1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10
-55C 25C
450 360 270 180 90 0
Typical Gain (hFE)
1.2
100C
VCE=2V
630 540
1.0 0.8
IC/IB=50
-55C
0.6 0.4 1m
25C 100C
IC Collector Current (A)
hFE v IC
IC Collector Current (A)
10m
100m
1
10
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
ISSUE 1 - JUNE 2002 7
ZXTDA1M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D3 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12
0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005
3.00 BSC 0.82 1.01 1.02 1.21
0.118 BSC 0.032 0.0397 0.040 0.0476
0.0029 BSC 0 12
(c) Zetex plc 2002
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www.zetex.com ISSUE 1 - JUNE 2002 8

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